Toshiba Semiconductor and Storage TK13A50D(STA4,Q,M)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

π-MOSVII

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

400mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

38 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1800 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

45W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220SIS