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Vishay General Semiconductor - Diodes Division SS10P4CHM3_A/I

Part No.:
SS10P4CHM3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
TO-277, 3-PowerDFN
Description:
DIODE ARRAY SCHOTT 40V 5A TO277A
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SS10P4CHM3_A/I Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
eSMP®
Package/Case:
TO-277, 3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
5A
Voltage - Forward (Vf) (Max) @ If:
530 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
550 µA @ 40 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-277A (SMPC)
Image SS10P4CHM3_A/I SS10P4CHM3_A/H
Part Number SS10P4CHM3_A/I SS10P4CHM3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series eSMP® eSMP®
Package/Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) (per Diode) 5A 5A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 5 A 530 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 550 µA @ 40 V 550 µA @ 40 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-277A (SMPC) TO-277A (SMPC)
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