Vishay Siliconix SIR5112DP-T1-RE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

PowerPAK® SO-8

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

12.6A (Ta), 42.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7.5V, 10V

Rds On (Max) @ Id, Vgs:

14.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

790 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

5W (Ta), 56.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8