STMicroelectronics SCTL35N65G2V

Product attributes

Attribute value

Manufacturer:

STMicroelectronics

Series:

-

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

67mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

73 nC @ 20 V

Vgs (Max):

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1370 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

417W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PowerFlat™ (8x8) HV