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Rohm Semiconductor RS1E240GNTB

Part No.:
RS1E240GNTB
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET N-CH 30V 24A 8HSOP
Quantity:

Unit Price:$0

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RS1E240GNTB Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 27W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-HSOP
Image RS1E240GNTB
Part Number RS1E240GNTB
Manufacturer Rohm Semiconductor
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 27W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
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