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Toshiba Semiconductor and Storage RN2402S,LF(D

Part No.:
RN2402S,LF(D
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Description:
TRANS PREBIAS PNP 50V 0.1A SMINI
Quantity:

Unit Price:$0

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RN2402S,LF(D Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Image RN2402S,LF(D
Part Number RN2402S,LF(D
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package S-Mini
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