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Toshiba Semiconductor and Storage RN2118(T5L,F,T)

Part No.:
RN2118(T5L,F,T)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-75, SOT-416
Description:
TRANS PREBIAS PNP 50V 0.1A SSM
Quantity:

Unit Price:$0

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RN2118(T5L,F,T) Information

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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-75, SOT-416
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
47 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SSM
Image RN2118MFV(TPL3) RN2118(T5L,F,T)
Part Number RN2118MFV(TPL3) RN2118(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - -
Package/Case SOT-723 SC-75, SOT-416
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 47 kOhms 47 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - 200 MHz
Power - Max 150 mW 100 mW
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package VESM SSM
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