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Toshiba Semiconductor and Storage RN1442ATE85LF

Part No.:
RN1442ATE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Description:
TRANS PREBIAS NPN 20V 0.3A SMINI
Quantity:

Unit Price:$0

Ext Price:$0

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RN1442ATE85LF Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
300 mA
Voltage - Collector Emitter Breakdown (Max):
20 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
30 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Image RN1442ATE85LF
Part Number RN1442ATE85LF
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 20 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 30 MHz
Power - Max 200 mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package S-Mini
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