Toshiba Semiconductor and Storage RN1117MFV,L3F

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-723

Packaging:

Tape & Reel (TR)

Product Status:

Active

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

10 kOhms

Resistor - Emitter Base (R2):

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

250 MHz

Power - Max:

150 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

VESM