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Toshiba Semiconductor and Storage RN1108ACT(TPL3)

Part No.:
RN1108ACT(TPL3)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-101, SOT-883
Description:
TRANS PREBIAS NPN 50V 0.08A CST3
Quantity:

Unit Price:$0

Ext Price:$0

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RN1108ACT(TPL3) Information

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Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-101, SOT-883
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
80 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
22 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
100 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CST3
Image RN1108ACT(TPL3)
Part Number RN1108ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case SC-101, SOT-883
Packaging Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 100 mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package CST3
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