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Toshiba Semiconductor and Storage RN1102MFV,L3XHF(CT

Part No.:
RN1102MFV,L3XHF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SOT-723
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
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Unit Price:$0

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RN1102MFV,L3XHF(CT Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SOT-723
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
150 mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
VESM
Image RN1102MFV,L3F RN1102MFV,L3XHF(CT
Part Number RN1102MFV,L3F RN1102MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - -
Package/Case SOT-723 SOT-723
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 150 mW 150 mW
Grade - Automotive
Qualification - AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package VESM VESM
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