Rohm Semiconductor RJ1L12BGNTLL

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.9mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

175 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

9000 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

192W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263AB