Nexperia USA Inc. PSMN2R9-100SSEJ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

SOT-1235

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

210A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

188 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

13280 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

341W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK88 (SOT1235)