Nexperia USA Inc. PSMN1R2-55SLHAX

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

SOT-1235

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55 V

Current - Continuous Drain (Id) @ 25°C:

330A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.03mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

395 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

25773 pF @ 27 V

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

375W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK88 (SOT1235)