NXP Semiconductors PMXB350UPEZ

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

3-XDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.2V, 4.5V

Rds On (Max) @ Id, Vgs:

447mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

2.3 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

116 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

360mW (Ta), 5.68W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1010D-3