Nexperia USA Inc. PMV65ENEAR

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

75mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

160 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

490mW (Ta), 6.25W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

TO-236AB