Nexperia USA Inc. PMH850UPEH

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

TrenchMOS™

Package/Case:

3-XFDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Rds On (Max) @ Id, Vgs:

1Ohm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.9 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

62.2 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

660mW (Ta), 2.23W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN0606-3