NXP USA Inc. PMDPB95XNE2115

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

6-UDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

2.7A (Ta)

Rds On (Max) @ Id, Vgs:

99mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

258pF @ 15V

Power - Max:

510mW (Ta), 8.33W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-HUSON (2x2)