NXP Semiconductors PDTC114ET215

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Bulk

Product Status:

Active

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

10 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

230 MHz

Power - Max:

250 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT23-3 (TO-236)