NXP USA Inc. PDTB123ES,126

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:

Tape & Box (TB)

Product Status:

Obsolete

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

500 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

2.2 kOhms

Resistor - Emitter Base (R2):

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

500 mW

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3