NXP USA Inc. PDTB113EK,115

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

500 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

1 kOhms

Resistor - Emitter Base (R2):

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

33 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

250 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SMT3; MPAK