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onsemi NSVMMUN2132LT1G-M01

Part No.:
NSVMMUN2132LT1G-M01
Manufacturer:
onsemi
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Description:
TRANS PREBIAS PNP 50V SOT23-3
Quantity:

Unit Price:$0

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NSVMMUN2132LT1G-M01 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
4.7 kOhms
Resistor - Emitter Base (R2):
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
246 mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Image NSVMMUN2132LT1G NSVMMUN2132LT1G-M01 NSVMMUN2132LT1G-M01
Part Number NSVMMUN2132LT1G NSVMMUN2132LT1G-M01 NSVMMUN2132LT1G-M01
Manufacturer onsemi onsemi onsemi
Series - - -
Package/Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR) Bulk Bulk
Product Status Active Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 4.7 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 15 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
Frequency - Transition - - -
Power - Max 246 mW 246 mW 246 mW
Grade Automotive Automotive Automotive
Qualification AEC-Q101 AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
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