Microchip Technology MSCSM120X10CTYZBNMG

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

6 N-Channel (3-Phase Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

28A (Tc), 49A (Tc)

Rds On (Max) @ Id, Vgs:

100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 1mA, 2.7V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

64nC @ 20V, 137nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

838pF @ 1000V, 1990pF @ 1000V

Power - Max:

116W (Tc), 196W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-