Microchip Technology MSC180SMA120SDT/R

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

mSiC™

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V, 20V

Rds On (Max) @ Id, Vgs:

225mOhm @ 8A, 20V

Vgs(th) (Max) @ Id:

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

36 nC @ 20 V

Vgs (Max):

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

481 pF @ 1.2 kV

FET Feature:

-

Power Dissipation (Max):

146W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7