IXYS MCB60I1200TZ

Product attributes

Attribute value

Manufacturer:

IXYS

Series:

-

Package/Case:

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

34mOhm @ 50A, 20V

Vgs(th) (Max) @ Id:

4V @ 15mA

Gate Charge (Qg) (Max) @ Vgs:

160 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

2790 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268AA (D3Pak-HV)