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Vishay General Semiconductor - Diodes Division MBR20100CT-E3/4W

Part No.:
MBR20100CT-E3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
TO-220-3
Description:
DIODE ARR SCHOT 100V 10A TO2203
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Unit Price:$0

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MBR20100CT-E3/4W Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
TMBS®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io) (per Diode):
10A
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 100 V
Operating Temperature - Junction:
-65°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Image MBR20100CT-M3/4W MBR20100CT-E3/4W MBR20100CT-1
Part Number MBR20100CT-M3/4W MBR20100CT-E3/4W MBR20100CT-1
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series TMBS® TMBS® TMBS®
Package/Case TO-220-3 TO-220-3 TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube Tube Tube
Product Status Active Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Grade - - -
Qualification - - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-262-3
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