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Taiwan Semiconductor Corporation MBR1035CT

Part No.:
MBR1035CT
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Diode Arrays
Package:
TO-220-3
Description:
DIODE ARR SCHOTT 35V 10A TO220AB
Quantity:

Unit Price:$0

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MBR1035CT Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
35 V
Current - Average Rectified (Io) (per Diode):
10A (DC)
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 35 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Image MBR1035CTH MBR1035CT C0G MBR1035CT
Part Number MBR1035CTH MBR1035CT C0G MBR1035CT
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - - -
Package/Case TO-220-3 TO-220-3 TO-220-3
Packaging Tube Tube Tube
Product Status Active Discontinued at Digi-Key Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 35 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 100 µA @ 35 V 100 µA @ 35 V 100 µA @ 35 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Grade Automotive - -
Qualification AEC-Q101 - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
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