Microsemi Corporation JANSR2N7381

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

TO-257-3

Packaging:

Tray

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

12V

Rds On (Max) @ Id, Vgs:

490mOhm @ 9.4A, 12V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

50 nC @ 12 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 75W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Military

Qualification:

MIL-PRF-19500/614

Mounting Type:

Through Hole

Supplier Device Package:

TO-257