Infineon Technologies IRF7701

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-TSSOP (0.173", 4.40mm Width)

Packaging:

Tube

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

11mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

100 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

5050 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSSOP