Infineon Technologies IRF6602

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

DirectFET™ Isometric MQ

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

13mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1420 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

2.3W (Ta), 42W (Tc)

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET™ MQ