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Infineon Technologies IRF40H233ATMA1
- Part No.:
- IRF40H233ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Description:
- MOSFET 2N-CH 40V 65A 8TDSON
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
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IRF40H233ATMA1 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- StrongIRFET™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Tc)
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200pF @ 20V
- Power - Max:
- 3.8W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-4
| Image |  |
| Part Number | IRF40H233ATMA1 |
| Manufacturer | Infineon Technologies |
| Series | StrongIRFET™ |
| Package/Case | 8-PowerVDFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 20V |
| Power - Max | 3.8W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-4 |
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