Infineon Technologies IRF1018ESPBF

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Tube

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

69 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2290 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

110W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK