Infineon Technologies IPB043N10NF2SATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

StrongIRFET™ 2

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

21A (Ta), 135A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

4.35mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:

85 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4000 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 167W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3