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Infineon Technologies IAUC45N04S6N070HATMA1

Part No.:
IAUC45N04S6N070HATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Description:
MOSFET 2N-CH 40V 45A 8TDSON
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IAUC45N04S6N070HATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
45A (Tj)
Rds On (Max) @ Id, Vgs:
7mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
701pF @ 25V
Power - Max:
41W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-57
Image IAUC45N04S6N070HATMA1
Part Number IAUC45N04S6N070HATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 45A (Tj)
Rds On (Max) @ Id, Vgs 7mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 701pF @ 25V
Power - Max 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-57
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