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Renesas Electronics Corporation HSG1002VE-TL-E

Part No.:
HSG1002VE-TL-E
Manufacturer:
Renesas Electronics Corporation
Category:
Bipolar RF Transistors
Package:
4-SMD, Gull Wing
Description:
RF 0.035A C BAND GERMANIUM NPN
Quantity:

Unit Price:$0

Ext Price:$0

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HSG1002VE-TL-E Information

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Manufacturer:
Renesas Electronics Corporation
Series:
-
Package/Case:
4-SMD, Gull Wing
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
3.5V
Frequency - Transition:
38GHz
Noise Figure (dB Typ @ f):
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:
8dB ~ 19.5dB
Power - Max:
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 2V
Current - Collector (Ic) (Max):
35mA
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
4-MFPAK
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