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Toshiba Semiconductor and Storage HN1C03FU-B,LF

Part No.:
HN1C03FU-B,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
TRANS 2NPN DUAL 20V 300MA US6
Quantity:

Unit Price:$0

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HN1C03FU-B,LF Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
300mA
Voltage - Collector Emitter Breakdown (Max):
20V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 3mA, 30A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
350 @ 4mA, 2V
Power - Max:
200mW
Frequency - Transition:
30MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Image HN1C03FU-B,LF HN1C03FU-A(TE85L,F
Part Number HN1C03FU-B,LF HN1C03FU-A(TE85L,F
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - -
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 300mA 300mA
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30A 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA, 2V 200 @ 4mA, 2V
Power - Max 200mW 200mW
Frequency - Transition 30MHz 30MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package US6 US6
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