Toshiba Semiconductor and Storage HN1B04FE-GR,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

Transistor Type:

1 NPN, 1 PNP

Current - Collector (Ic) (Max):

150mA

Voltage - Collector Emitter Breakdown (Max):

50V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

200 @ 2mA, 6V

Power - Max:

100mW

Frequency - Transition:

80MHz

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6