Renesas Electronics Corporation HAT2210RWS-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual), Schottky

FET Feature:

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

7.5A (Ta), 8A (Ta)

Rds On (Max) @ Id, Vgs:

24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4.6nC @ 4.5V, 11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

630pF @ 10V, 1330pF @ 10V

Power - Max:

1.5W (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP