Renesas Electronics Corporation HAT1126RWS-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 P-Channel (Dual)

FET Feature:

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Rds On (Max) @ Id, Vgs:

50mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

37nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2300pF @ 10V

Power - Max:

3W (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP