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Vishay General Semiconductor - Diodes Division GBL10E-E3/P
- Part No.:
- GBL10E-E3/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Bridge Rectifiers
- Package:
- 4-SIP, GBL
- Description:
- BRIDGE RECT 1PHASE 1KV 3A GBL
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
GBL10E-E3/P Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- 4-SIP, GBL
- Packaging:
- Tube
- Product Status:
- Active
- Diode Type:
- Single Phase
- Technology:
- Standard
- Voltage - Peak Reverse (Max):
- 1 kV
- Current - Average Rectified (Io):
- 3 A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 4 A
- Current - Reverse Leakage @ Vr:
- 5 µA @ 1000 V
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- GBL
| Image |  |
|
| Part Number | GBL10E-E3/P | GBL10E-E3/A |
| Manufacturer | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Series | - | - |
| Package/Case | 4-SIP, GBL | 4-SIP, GBL |
| Packaging | Tube | Bulk |
| Product Status | Active | Active |
| Diode Type | Single Phase | Single Phase |
| Technology | Standard | Standard |
| Voltage - Peak Reverse (Max) | 1 kV | 1 kV |
| Current - Average Rectified (Io) | 3 A | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 4 A | 1 V @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 1000 V |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | GBL | GBL |
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