GeneSiC Semiconductor GB10SLT12-247D

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Obsolete

Diode Configuration:

1 Pair Common Cathode

Technology:

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):

1200 V

Current - Average Rectified (Io) (per Diode):

12A

Voltage - Forward (Vf) (Max) @ If:

1.9 V @ 5 A

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):

-

Current - Reverse Leakage @ Vr:

50 µA @ 1200 V

Operating Temperature - Junction:

-55°C ~ 175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247