Nexperia USA Inc. GANE3R9-150QBAZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

25-PowerVFQFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 30A, 5V

Vgs(th) (Max) @ Id:

2.1V @ 12mA

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 5 V

Vgs (Max):

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

2200 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

65W (Ta)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

25-VQFN (4x6)