Nexperia USA Inc. GAN140-650EBEZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

8-VDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V

Rds On (Max) @ Id, Vgs:

140mOhm @ 5A, 6V

Vgs(th) (Max) @ Id:

2.5V @ 17.2mA

Gate Charge (Qg) (Max) @ Vgs:

3.5 nC @ 6 V

Vgs (Max):

+7V, -1.4V

Input Capacitance (Ciss) (Max) @ Vds:

125 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

113W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

DFN8080-8