Nexperia USA Inc. GAN111-650WSBQ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

114mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:

4.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4.9 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

336 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

107W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3L