Nexperia USA Inc. GAN039-650NTBZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

58.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

39mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:

4.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

26 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1980 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

CCPAK1212i