GeneSiC Semiconductor GA20JT12-263

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tube

Product Status:

Obsolete

FET Type:

-

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

60mOhm @ 20A

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

3091 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

282W (Tc)

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7