GeneSiC Semiconductor GA08JT17-247

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Obsolete

FET Type:

-

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

8A (Tc) (90°C)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

250mOhm @ 8A

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

48W (Tc)

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AB