GeneSiC Semiconductor G3R350MT12J-TR

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

G3R™, LoRing™

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V, 18V

Rds On (Max) @ Id, Vgs:

395mOhm @ 4A, 18V

Vgs(th) (Max) @ Id:

2.7V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

10 nC @ 15 V

Vgs (Max):

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

331 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

64W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7