GeneSiC Semiconductor G3F34MT12K

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

45mOhm @ 26A, 18V

Vgs(th) (Max) @ Id:

4.3V @ 18mA

Gate Charge (Qg) (Max) @ Vgs:

104 nC @ 18 V

Vgs (Max):

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

2418 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

263W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4