Renesas Electronics Corporation FN4L4M-T1B-A

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

-

Packaging:

Box

Product Status:

Obsolete

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

22 kOhms

Resistor - Emitter Base (R2):

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

85 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

200mV @ 250µ, 5mA

Current - Collector Cutoff (Max):

100nA (ICBO)

Frequency - Transition:

-

Power - Max:

200 mW

Grade:

-

Qualification:

-

Mounting Type:

-

Supplier Device Package:

-